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Anhui Rineng Zhongtian Semiconductor Development Co.,Ltd.
Address : Huoshan Economic Development Zone, Anhui Province, China.
Cixi City Rixing Electronics Co.,Ltd.
Address : Jietang Industrial Park,Tianyuan,Cixi City,Zhejiang Province,China
Tel : +86-574-63451148 63450122
63441748 63440758
Fax : +86-574-63456148
E-mali : sales@qjsolar.com
Web:http://www.qjsolar.com |
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Startseite=>Produkte |
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Silizium-Wafer
Monokristalline Silizium-Wafer 125x125mm
Technische Parameter von Monokristalline Silizium-Wafer
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Crystal Type |
Monocrystalline |
Growth Method |
CZ |
Conductivity |
P-Type |
Dopant |
Boron |
Crystal Orientation |
<100>±1° |
Resistivity |
1-3Ω . cm |
Minority Carrier Lifetime |
≥ 10μs |
Oxygen Concentration |
≤1.0×1018 atoms/cm3 |
Carbon Concentration |
≤ 5×1016 atoms/cm3 |
Wafer Dimension |
125×125±0.5mm |
Wafer Diameter |
150±0.5mm；165±0.5mm |
Thickness |
200±20μm |
TTV |
≤30μm |
Saw Marks |
≤20μm |
Angularity |
≤35μm |
Cracks |
None |
Edge Defect |
None |
Surface Quality |
Clean,no smudge,fingerprints and pin holes |
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Polykristalline Silizium-Wafer 156x156mm
Technische Parameter von Polykristalline Silizium-Wafer
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Crystal Type |
Polycrystalline |
Conductivity |
P-Type |
Dopant |
Boron |
Resistivity |
1-3Ω . cm |
Minority Carrier Lifetime |
≥ 2μs |
Oxygen Concentration |
≤1.0×1018 atoms/cm3 |
Carbon Concentration |
≤ 5×1017 atoms/cm3 |
Wafer Dimension |
156x156±0.5mm |
Wafer Diameter |
219±0.5mm |
Thickness |
200±20μm |
TTV |
≤30μm |
Saw Marks |
≤20μm |
Angularity |
≤20μm |
Cracks |
None |
Edge Defect |
None |
Surface Quality |
Clean,no smudge,fingerprints and pin holes |
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